The global site of the UK's leading magazine for automation, motion engineering and power transmission
15 January, 2021

GaN power devices `ten times better than silicon`

11 September, 2008

The power semiconductor giant International Rectifier has developed a "revolutionary" power device technology based on gallium nitride that, it claims, can perform up to ten times better than silicon-based technologies and will cut energy consumption dramatically in a variety of applications.

The GaN-based power device technology is the result of five years of research and development by IR, based on its proprietary GaN-on-silicon epitaxial technology.

Oleg Khyakin 

According to IRís president and CEO, Oleg Khaykin (above), the development "heralds a new era for power conversion, in line with our core mission to help our customers save energy. We fully anticipate the potential impact of this new device technology platform on the power conversion market to be at least as large as the introduction of the power Hexfet by IR some 30 years ago."

  • To view a digital copy of the latest issue of Drives & Controls, click here.

    To visit the digital library of past issues, click here

    To subscribe to the magazine, click here



Drives Show 2022The next Drives & Controls Exhibition and Conference will take place in Birmingham, UK, from 5-7 April, 2022. For more information on the event, visit the Show Web site


"Do you think that robots create or destroy jobs?"



Most Read Articles